Spin-torque magnetoresistive random access memory (ST-MRAM) is emerging as the most promising of the next-generation memory technologies. ST-MRAM is persistent, as a result of storing data when the power is off. It’s fast, reading and writing at DRAM and even SRAM cache speeds. On top of that, the memory is cost-effective—it uses a small single-transistor bit-cell and requires only two or three additional masking steps...
from Electronic Design http://bit.ly/2iSLfQj
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